A Highly Reliable TiN/Al2O3/TiN MIM Technology for Embedded DRAMs

L.-L. Chao; C. D. Wu; H. L. Lin; Y. L. Tu; K. Y. Lin; C.-Y. Yu; C. Y. Chen; F. J. Shiu; C. T. Ho; C.-S. Tsai; S.-G. Wuu; C. Wang

doi:https://doi.org/10.7567/SSDM.2003.C-4-4

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[C-4-4] A Highly Reliable TiN/Al2O3/TiN MIM Technology for Embedded DRAMs

L.-L. Chao, C. D. Wu, H. L. Lin, Y. L. Tu, K. Y. Lin, C.-Y. Yu, C. Y. Chen, F. J. Shiu, C. T. Ho, C.-S. Tsai, S.-G. Wuu, C. Wang (1.Memory Technology Division, Taiwan Semiconductor Manufacturing Company, Ltd.)

https://doi.org/10.7567/SSDM.2003.C-4-4

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