[B-6-2] Thin-Metal Inserted Single-phase Ni-FUSI(MISF) and High-k Gate Stack for Productive LSTP CMOS Application

Y. Yamamoto¹, Y. Nishida¹, K. Satoh¹, T. Kawahara¹, S. Sakashita¹, M. Mizutani¹, S. Yamanari¹, Y. Ariyama¹, Y. Miyagawa¹, N. Murata¹, T. Sakai¹, M. Inoue¹, J. Yugami¹, S. Ogino¹, K. Eikyu¹, T. Hayashi¹, S. Endo¹, T. Yamashita¹, H. Oda¹, Y. Inoue¹, H. Fujimoto², Y. Sato², T. Oosuka², A. Tsudumitani², Y. Moriyama², K. Nakanishi², J. Hirase², T. Yamada², H. Ogawa², Y. Mori² (1.Renesas Tech. Corp., 2.Matsushita Electric Industrial Co., Ltd., Japan)

https://doi.org/10.7567/SSDM.2008.B-6-2