[B-8-5] Activation of B and As in Ultra Shallow Junction with Heating and Cooling Rates Controlled Millisecond Annealing Induced by Thermal Plasma Jet

K. Matsumoto¹, S. Higashi¹, H. Furukawa¹, T. Okada¹, H. Murakami¹, S. Miyazaki¹ (1.Hiroshima Univ.)

https://doi.org/10.7567/SSDM.2009.B-8-5