[2D05-09] Accident-tolerant Fuel 2

[2D09] High Temperature Formation Behavior of SiO₂ Oxide Film Formed on Surface of SiC

*Souichirou Yamaguchi¹, Takashi Onithuka², Masayoshi Uno² (1. University of Fukui graduate school of engineering Advanced Interdisciplinary Science and Technology, 2. Research Institute of Nuclear Engineering)

Keywords:slicon carbide, silicon dioxide, High temperature oxidation behavior

For the purpose of investigating the soundness of the SiO₂ oxide film formed on the surface of SiC under the condition of accident, the oxidation test was carried out on the SiC sample under the conditions of temperature: 1100, 1300, 1500 ℃., holding time: 25, 50, 100 h, Atmosphere: Air.
As a result, it was confirmed that the SiO₂ film was cracked and multilayered structure, and it was found that the oxidation reaction did not stop depending on the condition even though SiO₂ was formed.