[2H01-08] イメージング検出器

[2H04] Development and characterization of SOI based event driven neutron imaging sensor

*Zhang Lan¹, Mizuki Uenomachi², Kenji Shimazoe¹, Hiroyuki Takahashi¹, Ayaki Takeda³, Yoshio Kamiya¹, Koji Mori³, Takeshi Go Tsuru⁴, Ikuo Kurachi⁶, Yasuo Arai⁵ (1. UTokyo, 2. RIKEN, 3. Miyazaki Univ., 4. Kyoto Univ., 5. KEK, 6. D&S Inc.)

キーワード：imaging sensor, semiconductor, neutron

A neutron imaging pixelated sensor based on ¹⁰B coated SOI(Silicon-on-Insulator)-CMOS pixel silicon device was designed and developed for the operation in the event driven mode. The pixel size of sensor is 36 µm × 36 µm and the die size is 15.3 mm × 24.6 mm with pixels of 384 × 608. The fabricated imaging sensor can readout the energy deposition pattern with the programmed area size through the in-pixel trigger function for fast readout. In this study, neutron irradiation test is performed to investigate sensor’s response. The time-of-flight capability and event identification capability has been evaluated. These capabilities are important to improve the signal to noise ratio in neutron events and also will be useful for the applications requiring neutron/γ discrimination.