11:15 〜 11:30
[3J07] Effect of Ion Irradiation on Mechanical Properties of Silicon Carbide
キーワード：SiC, Ion irradiation, Nano-indentation, EBSD, Stress distribution
Silicon carbide (SiC) are promising materials in many nuclear environments, which makes it necessary to understand how it’s mechanical property deforms after irradiation.
SiC samples were irradiated to 0.1/1/3/10 dpa by 5.1MeV Si ions at 800℃. Nanoindentation was used in extracting mechanical properties changes caused by irradiation. Hardness and elastic modulus were calculated by the load–displacement curves. Stresses distribution nearby indentation was estimated by electron back scatter diffraction (EBSD) and analysis software.
SiC samples were irradiated to 0.1/1/3/10 dpa by 5.1MeV Si ions at 800℃. Nanoindentation was used in extracting mechanical properties changes caused by irradiation. Hardness and elastic modulus were calculated by the load–displacement curves. Stresses distribution nearby indentation was estimated by electron back scatter diffraction (EBSD) and analysis software.