[2I18-20] Application of Pulsed-neutron Source System and Its Improvement

[2I19] Estimation of neutron energy-dependent SEU cross sections of semiconductor devices unable to perform fast TOF-analysis

*Tomoki Sebe¹, Hirotaka Sato¹, Takashi Kamiyama¹, Hidenori Iwashita², Ryu Kiuchi², Yoshiharu Hiroshima², Michihiro Furusaka¹, Yoshiaki Kiyanagi¹ (1. Hokkaido Univ., 2. NTT)

Keywords:Neutron-induced soft error, Neutron energy spectrum, Energy-dependent single event upset cross section, Proton cyclotron-driven neutron source, Neutron production target

Neutron-induced soft errors in semiconductor devices are becoming problems. Therefore, it is important to estimate soft error rate (SER) of various devices. The estimation of SER requires an energy spectrum of neutrons incident on devices and energy-dependent SEU cross-sections. Such SEU cross-sections can be measured by TOF method, but the measurements above 1 MeV cannot be carried out except FPGAs due to limitation of error detection speed. Hence, we devised a method to estimate energy-dependent SEU cross-sections from SERs, which vary with incident neutron spectra. To apply this method for SRAM, we changed the incident neutron spectrum by changing neutron production targets at 18 MeV proton cyclotron-driven neutron source facility and estimated SEU cross-sections of SRAM from the measurements.