[3E10-13] Waste Management

[3E12] Direct energy conversion using Pt/Ga₂O₃ Schottky junction in ²⁴¹Am gamma ray region

Tatsuo Fukuda¹, Yukimasa Fukada¹, Masaaki Kobata¹, *Kenji Yoshii¹, Takahisa Shobu¹, Aki Tominaga¹, Yoshiyuki Yamashita², Hajime Tanida¹, Tsuyoshi Yaita¹ (1. JAEA, 2. NIMS)

Keywords:Energy conversion, Radioactive wastes, Gamma ray, Gallium oxide, Schottky junction, Interface

Direct energy conversion has been investigated so far using Ni/SiC Schottky junctions with the irradiation of monochromatized synchrotron X -rays simulating the gamma rays of ²³⁷Np (30 keV) and ²⁴¹Am (60keV). >From current-voltage measurements, the energy conversion efficiencies reached up to ~1.6%, and from hard X-ray photoelectron spectroscopy and secondary ion mass spectroscopy measurements we suggested the formation of Ni-Si coumpounds at the interface could degradate the conversion efficiency. Recently we have started measurements using Pt/Ga₂O₃ Schottky junctions, which has higher density than SiC, with synchrotron X-rays of 60keV - simulating the gamma rays of ²⁴¹Am. In this talk we would like to discuss the results comparing with the Ni/SiC case.