*Masaaki Ono^1,2, Katsumasa Yoshioka², Kengo Nozaki^1,2, Akihiko Shinya^1,2, Masaya Notomi^1,2,3 (1. NTT Nanophotonics Center (Japan), 2. NTT Basic Research Labs. (Japan), 3. Tokyo Institute of Technology (Japan))

*Shiru Jiang^1,2, Su-Han Kim², Chul-Soon Park², Woo-Bin Lee^1,2, Sang-Shin Lee^1,2 (1. Department of Electronic Engineering, Kwangwoon University (Korea), 2. Nano Device Application Center, Kwangwoon University (Korea))

*Kenta Takata^1,2, Kengo Nozaki^1,2, Eiichi Kuramochi^1,2, Shinji Matsuo^1,3, Koji Takeda^1,3, Takuro Fujii^1,3, Shota Kita^1,2, Nathan Roberts², Akihiko Shinya^1,2, Masaya Notomi^1,2,4 (1. NTT Nanophotonics Center (Japan), 2. NTT Basic Research Labs. (Japan), 3. NTT Device Tech. Labs. (Japan), 4. Tokyo Inst. Tech. (Japan))

Syutaro Otsuka¹, *Yuto Moritake¹, Taiki Yoda^2,3, Takahiro Uemura¹, Masaaki Ono^2,3, Eiichi Kuramochi^2,3, Masaya Notomi^1,2,3 (1. Tokyo Inst. of Tech. (Japan), 2. NTT Basic Res. Lab. (Japan), 3. NTT Nanophotonics Center (Japan))

*Taiki Yoda¹, Yuto Moritake^2,3, Kazuki Yokomizo⁴, Shuichi Murakami^2,5, Masaya Notomi^1,2,6 (1. NTT Basic Research Laboratories (Japan), 2. Tokyo Tech (Japan), 3. JST Presto (Japan), 4. RIKEN (Japan), 5. TIES (Japan), 6. NTT Nanophotonics center (Japan))