*Tetsuya Ido¹ (1. NICT (Japan))

*Tomoya Akatsuka¹, Hiromitsu Imai¹, Kaoru Arai¹, Hiroki Sakuma¹, Atsushi Ishizawa¹, Takashi Goh², Toshikazu Hashimoto³, Masao Takamoto⁴, Hidetoshi Katori^4,5, Katsuya Oguri¹, Hideki Gotoh¹, Tetsuomi Sogawa⁶ (1. NTT Basic Research Labs. (Japan), 2. NTT Device Innovation Center (Japan), 3. NTT Device Technology Labs. (Japan), 4. RIKEN (Japan), 5. The Univ. of Tokyo (Japan), 6. NTT Science and Core Technology Laboratory Group (Japan))

*Takeshi Umeki¹, Tomoya Akatsuka², Atsushi Ishizawa², Hiromitsu Imai², Takushi Kazama¹, Takahiro Kashiwazaki¹, Kei Watanabe¹, Katsuya Oguri², Ryoichi Kasahara¹ (1. NTT Device Technology Labs. (Japan), 2. NTT Basic Research Labs. (Japan))

*Yuto Tanabe¹, Yuma Sakamoto¹, Takuya Kohno², Daisuke Akamatsu¹, Feng-Lei Hong¹ (1. Yokohama National University (Japan), 2. National Institute of Technology, Gifu College (Japan))