[CMP11A] QD Devices and Crystal Growth Technology

[CMP11A-01] Temperature insensitivity of emission wavelength of highly-stacked quantum dot laser fabricated on InP(311)B substrate with Bi atoms irradiation

*Kouichi Akahane¹, Atsushi Matsumoto¹, Toshimasa Umezawa¹, Naokatsu Yamamoto¹, Yoriko Tominaga², Satoshi Yanase³, Tomohiro Maeda³, Hideyuki Sotobayashi³, Atsushi Kanno¹ (1. Natl. Inst. of Info. and Comm. Tech. (Japan), 2. Hiroshima Univ. (Japan), 3. Aoyama Gakuin Univ. (Japan))

[Presentation Style] Onsite

The quantum dot laser diodes grown by molecular beam epitaxy with Bi irradiation exhibit a decrease in temperature dependence on the lasing wavelength.