[CMP11A] QD Devices and Crystal Growth Technology

[CMP11A-03] Temperature Dependence of Mid-infrared Emission Process of InAs/GaSb Superlattices Grown by MOVPE

*Masakazu Arai¹, Koji Maeda¹, Yuto Iwakiri¹, Takeshi Fujisawa² (1. Univ. of Miyazaki (Japan), 2. Hokkaido Univ. (Japan))

[Presentation Style] Onsite

The mid-infrared emission of InAs/GaSb superlattices grown by MOVPE was compared with the calculated spectrum by perturbation method. Above 90 K, the emission from higher energy transitions is larger than those from the lowest levels.