[CMP11A] QD Devices and Crystal Growth Technology

[CMP11A-04] Electrode Thickness Dependence of GaAs based Photovoltaic Device Characteristics for Optical Wireless Power Transmission

*Akira Kushiyama¹, Yuga Motomura¹, Kensuke Nishioka¹, Masakazu Arai¹ (1. University of Miyazaki (Japan))

[Presentation Style] Onsite

We experimentally investigated the mesh shaped electrode thickness dependence of GaAs based photovoltaic device under laser irradiation. Thick electrode was effective to increase the fill factor even under partial irradiation.