[CMP11A] QD Devices and Crystal Growth Technology

[CMP11A-05] Post Growth Annealing and InGaSb Layer Insertion Effects of Metamorphic InAsSb on GaAs Substrate

*Koki Hombu¹, Shota Nakagawa¹, Yuto Iwakiri¹, Koji Maeda¹, Masakazu Arai¹ (1. Univ. of Miyazaki (Japan))

[Presentation Style] Onsite

We investigated the effect of post-growth annealing on metamorphic InAsSb on GaAs. The mid-infrared range photoluminescence intensity was improved, however, the surface flatness was deteriorated. The photoluminescence was also improved by inserting the InGaSb layer.