[CMP11B] III/V Waveguide Devices

[CMP11B-01 (Invited)] 256-Gbit/s PAM-4 directly modulated membrane lasers on SiC substrate

*Suguru Yamaoka¹, Nikolaos Panteleimon Diamantopoulos¹, Hidetaka Nishi¹, Takuro Fujii¹, Koji Takeda¹, Tatsurou Hiraki¹, Takuma Tsurugaya¹, Shigeru Kanazawa², Hiromasa Tanobe², Takaaki Kakitsuka¹, Tai Tsuchizawa¹, Fumio Koyama³, Shinji Matsuo¹ (1. NTT Device Technology Labs (Japan), 2. NTT Device Innovation Center (Japan), 3. Laboratory for Future Interdisciplinary Research of Science and Technology, Tokyo Institute of Technology (Japan))

[Presentation Style] Onsite

A membrane laser on high-thermal-conductivity SiC exhibits a 42-GHz relaxation oscillation frequency because of the large optical confinement and heat dissipation. Photon-photon resonance increases the bandwidth to 108 GHz capable of 256-Gbit/s PAM-4 signal transmission.