[CTuP11F] Novel Semiconductor Lasers

[CTuP11F-03] Theory of highly-strained InAs quantum well lasers grown on InP for optical communications at 2 μm

*Zoe C M Davidson¹, Judy M Rorison¹, Christopher A Broderick^2,3 (1. University of Bristol (UK), 2. Tyndall National Institute (Ireland), 3. University College Cork (Ireland))

[Presentation Style] Online

We present a theoretical analysis of highly-strained InAs quantum well lasers grown on InP for use in next-generation hollow-core fibre optical communications close to 2 μm, and validate our calculations against recent experimental data.