[CWP12B] Hybrid Material Integration for Silicon Photonics I

[CWP12B-03] Heterostructure vertical p-i-n GeSn Light-Emitting Diodes on Silicon-on-Insulator for 2µm Wavelength Band.

*Radhika Bansal¹, Guo En Chang¹ (1. National Chung Cheng University (Taiwan))

[Presentation Style] Onsite

We report on GeSn vertical p-i-n heterostructure light-emitting diode grown on silicon-on-insulator platform. Room-temperature electroluminescence spectra were demonstrated. These results pave the pathway for efficient on-chip light sources for integrated photonics in 2µm wavelength band.