[P-CM11-02] Advanced Dry Etching of GaAs/AlGaAs Multilayer Wafer for Circular Defect in Photonic Crystal (CirD) Laser
[Presentation Style] Onsite
We improved dry etching process by introducing 3-steps etching and 3 layers of quantum dots for fabricating the CirD laser that will be used for intra-chip optical communications. Excellent lasing property was consequently obtained.