[P-CM11-05] Large wavelength offset for lateral bandgap engineering by using Quantum Well Intermixing
[Presentation Style] Online
Patterned SiO2 and Si3N4 thin film on top of InGaAsP-based epi-layer. Quantum well intermixing had use for lateral bandgap engineering. 85nm wavelength difference has been attained in 1550nm quantum well, showing potential for photonic integration.