[P-OTh] ODF '22 Poster Session

[P-OTh-36] Laser Surface Modification Technology for Improving the Properties of Metal Oxide Semiconductor Gas Sensing Thin Films

Rou-Jhen Chen¹, Po-Jui Chen¹, Ming-Fu Chen¹, *Wen-Tse Hsiao¹ (1. Taiwan Instrument Research Institute(TIRI), NARLabs (Taiwan))

[Presentation Style] Online

This research developed a laser surface modification technology employing high-speed, high-precision optical scanning for gas sensing with SnO₂ metal oxide semiconductor. Only selective surface modifications were required to obtain various film and sensor properties. A metal oxide semiconductor film that underwent laser surface modification was subjected to various nitrogen dioxide (NO₂) gas concentrations (10, 30, and 50 ppm) for testing its utility for gas response and sensing and for desorption with an ultraviolet light–emitting diode method. The developed optical gas desorption mechanism can successfully desorb the target gas from a sensing film.