Th-2: SiC-2

[Th2-2] Discussion on carrier lifetime control in a drift layer of 1.2 kV class 4H-SiC devices for suppression of bipolar degradation

Toshiki Mii¹, *Masashi Kato¹, Shunta Harada², Hitoshi Sakane³ (1. Nagoya Inst. of Tech., 2. Nagoya Univ., 3. SHI-ATEX Co. Ltd.)