Electroluminescence in Power Electronic Applications: Utilization of p-n Junctions in Power Semiconductors as unintentional Light Emitting Diodes for Current and Temperature Sensing

Jonathan Winkler

Presentation information

Technical Session(Special Session & Regular Session)

[C5 (Special Session)] Wide Band Gap Devices & Related Issues

Tue. Oct 2, 2018 10:30 AM - 12:30 PM Room 5 (Conference Center 501)

Chairs: Kazuhiro Tsuruta (DENSO CORPORATION), Jean-Michel Morelle (VALEO)

Technical Session(Special Session & Regular Session)

[C5-2] Electroluminescence in Power Electronic Applications: Utilization of p-n Junctions in Power Semiconductors as unintentional Light Emitting Diodes for Current and Temperature Sensing

20189202

^○Jonathan Winkler¹, Jan Homoth¹, Ingmar Kallfass² (1.Robert Bosch GmbH, Germany, 2.University of Stuttgart, Germany)

Abstract password authentication.
◆Pre-registration attendees
PWD and ID will be announced by e-mail.
◆On-site registration attendees
PWD and ID are printed on the name badge.

Presentation information

[C5 (Special Session)] Wide Band Gap Devices & Related Issues

[C5-2] Electroluminescence in Power Electronic Applications: Utilization of p-n Junctions in Power Semiconductors as unintentional Light Emitting Diodes for Current and Temperature Sensing

20189202

Password