III-V Semiconductors

[FR-B1-01] Molecular Beam Epitaxial Growth of InGaAs/GaAsSb “W” Quantum Wells for Telecommunications Applications

〇Peter Carrington¹, Matthew Bentley^1,2, Dominic A. Duffy^3,4,5, Igor P. Marko^3,5, Andrew R.J. Marshall², Samir Rihani⁶, Graham Berry⁶, Michael Robertson⁶, John Rawsthorne⁶, Stephen J. Sweeney^3,4,5 (1. School of Engineering, Lancaster Univ. (UK), 2. Department of Physics, Lancaster Univ. (UK), 3. Department of Physics and ATI, Univ. of Surrey (UK), 4. ZiNIR Ltd (UK), 5. James Watt School of Engineering, Univ. of Glasgow (UK), 6. Huawei Technologies Res. and Development, Ipswich Res. Centre (UK))