III-V Semiconductors

[FR-B1-02] Buried-Ridge processed InP-based QDash lasers emitting at 1.3 and 1.5 µm

〇Arnaud Wilk^1,2, Oivier Delorme^2,1, Cosimo Calo^2,1, Alexandre Shen^2,1, Emmanuel Bourgon^2,1, Florence Martin^2,1, Karim Mekhazni^2,1, Igor Mijovic^2,1, Nicolas Vaissière^2,1, Frédéric Pommereau^2,1 (1. Nokia-Bell Labs (France), 2. III-V Lab (France))