III-V Semiconductors 3

[FR-B1-06 (Late News)] sp-d Hybridized Band Structure in n-type Ferromagnetic Semiconductor(In,Fe)As Studied by Resonant Inelastic X-Ray Scattering

M. Kobayashi1,2*, L. D. Anh1,2,3,4, T. Takeda1, H. Kiuchi5, H. Niwa6, J. Miyawaki5, P. N. Hai2,7, M. Oshima5, A. Fujimori8,9, Y. Harada5, and M. Tanaka1,2,10 (1 Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan2 Center for Spintronics Research Network, The University of Tokyo, Tokyo, Japan3 Institute of Engineering Innovation, Graduate School of Engineering, The University of Tokyo, Tokyo, Japan4 PRESTO, Japan Science and Technology Agency, Kawaguchi, Saitama, Japan5 Laser and Synchrotron Research Center, Institute for Solid State Physics, The University of Tokyo, Chiba, Japan6 Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Japan7 Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan8 Department of Physics, The University of Tokyo, Tokyo, Japan9 Department of Physics and Center for Quantum Technology, National Tsing Hua University, Hsinchu, Taiwan10 Institute for Nano Quantum Information Electronics, The University of Tokyo, Tokyo, Japan)