Reduction of threading dislocation density in GaSb layers grown on Si(001) by molecular beam epitaxy: misfit dislocation networks

Audrey Gilbert

11:00 AM - 11:15 AM

[TH-B1-03] Reduction of threading dislocation density in GaSb layers grown on Si(001) by molecular beam epitaxy: misfit dislocation networks

〇Audrey Gilbert¹, Karl Graser², Michel Ramonda¹, Achim Trampert², Éric Tournié^1,3, Jean-Baptiste Rodriguez¹ (1. IES, Univ. of Montpellier (France), 2. Paul-Drude-Inst. of Berlin (Germany), 3. Inst. Univ. of France (France))

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Heterogeneous Epitaxy and Integration 2

[TH-B1-03] Reduction of threading dislocation density in GaSb layers grown on Si(001) by molecular beam epitaxy: misfit dislocation networks

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