Nanoheteroepitaxy of binary and ternary III-V Structures with high scalability on CMOS-Compatible Silicon Nanotip Wafer using GS-MBE

Fariba - Hatami

11:15 AM - 11:30 AM

[TH-B1-04] Nanoheteroepitaxy of binary and ternary III-V Structures with high scalability on CMOS-Compatible Silicon Nanotip Wafer using GS-MBE

〇Fariba - Hatami¹, Navid Kafi¹, Anagha Kamath¹, Adreana Rodrigues-Weisensee¹, Christian Golz¹, Ines Häusler¹, Carsten Netzel², Martin Schmidbauer³, Oliver Skibitzki⁵, Adnan Hammud⁴, Haoran Ma³ (1. Humboldt-Univ zu Berlin (Germany), 2. Ferdinand-Braun-Inst. gGmbH (Germany), 3. Inst. für Kristallzüchtung (Germany), 4. Fritz-Haber-Inst. (Germany), 5. IHP-Leibniz-Inst. (Germany))

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Presentation information

Heterogeneous Epitaxy and Integration 2

[TH-B1-04] Nanoheteroepitaxy of binary and ternary III-V Structures with high scalability on CMOS-Compatible Silicon Nanotip Wafer using GS-MBE

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