Effect of growth temperature and III-V flux ratio on Ga-Bi induced GaAsBi wires grown by molecular beam epitaxy

Chalermchai - HIMWAS

1:00 PM - 2:30 PM

[TU-PS-08] Effect of growth temperature and III-V flux ratio on Ga-Bi induced GaAsBi wires grown by molecular beam epitaxy

〇Chalermchai - HIMWAS¹, Aritath - Thammathikul¹, Nathachon - Tachapisitpong¹, Wenich - Pumee¹, Songphol - Kanjanachuchai¹ (1. Chulalongkorn University (Thailand))

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Presentation information

III-V Semiconductors

[TU-PS-08] Effect of growth temperature and III-V flux ratio on Ga-Bi induced GaAsBi wires grown by molecular beam epitaxy

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