Obtaining of atomically smooth 4H-SiC (0001) surface by optimizing anodic oxidation parameters in slurryless electrochemical mechanical polishing

[B-4-5] Obtaining of atomically smooth 4H-SiC (0001) surface by optimizing anodic oxidation parameters in slurryless electrochemical mechanical polishing

〇Xu Yang¹、Xiaozhe Yang¹、Kentaro Kawai¹、Kenta Arima¹、Kazuya Yamamura¹ (1.Osaka University)

キーワード：Polishing、slurryless、electrochemical mechanical polishing