Obtaining of atomically smooth 4H-SiC (0001) surface by optimizing anodic oxidation parameters in slurryless electrochemical mechanical polishing

[B-4-5] Obtaining of atomically smooth 4H-SiC (0001) surface by optimizing anodic oxidation parameters in slurryless electrochemical mechanical polishing

〇Xu Yang¹, Xiaozhe Yang¹, Kentaro Kawai¹, Kenta Arima¹, Kazuya Yamamura¹ (1.Osaka University)

Keywords:Polishing、slurryless、electrochemical mechanical polishing