[Fr-2A] Bipolar Power Transistors

[Fr-2A-01(Invited)] Next-Generation High- to Ultra-High-Voltage SiC Power Devices

*Yoshiyuki Yonezawa¹, K. Nakayama¹, R. Kosugi¹, S. Harada¹, K. Kojima¹, T. Kato¹, H. Tsuchida², T. Kimoto³, H. Okumura¹ ( 1. National Institute of Advanced Industrial Science and Technology(AIST)(Japan), 2. Central Research Institute of Electric Power Industry(Japan), 3. Department of Electronic Science & Engineering, Kyoto University(Japan))