ICSCRM2019

講演情報

Oral Presentation

Power and High-Frequency Devices

[Fr-2A] Bipolar Power Transistors

2019年10月4日(金) 10:30 〜 12:00 Room A (Kyoto International Conference Center)

11:45 〜 12:00

[Fr-2A-05] 20kV-class Ultra-High Voltage 4H-SiC n-IE-IGBTs

*AKIHIRO KOYAMA1,2, Yuji Kiuchi1,3, Tomonori Mizushima1,4, Kensuke Takenaka1,4, Shinichiro Matsunaga1,4, Mitsuru Sometani1, Koji Nakayama1, Hitoshi Ishimori1, Atsuko Kimoto1, Manabu Takei1,4, Tomohisa Kato1, Yoshiyuki Yonezawa1, Hajime Okumura1 (1. AIST(Japan), 2. Mitsubishi Electric Corp.(Japan), 3. New Japan Radio Co. Ltd.(Japan), 4. Fuji Electric Co. Ltd.(Japan))