ICSCRM2019

Presentation information

Oral Presentation

Characterization and Defect Engineering

[Fr-3B] Device-related Characterization

Fri. Oct 4, 2019 1:00 PM - 2:15 PM Annex Hall 2 (Kyoto International Conference Center)

1:30 PM - 1:45 PM

[Fr-3B-03] Investigation of Bipolar Degradation of the Base-Collector-Diode of 1.2 kV BJTs under Different Current and Temperature Conditions

*Sarah Rugen1, Nando Kaminski1, Siddarth Sundaresan2, Ranbir Singh2 (1. Univ. of Bremen(Germany), 2. GeneSiC Semiconductor(United States of America))