ICSCRM2019

講演情報

Oral Presentation

Characterization and Defect Engineering

[Fr-3B] Device-related Characterization

2019年10月4日(金) 13:00 〜 14:15 Annex Hall 2 (Kyoto International Conference Center)

13:30 〜 13:45

[Fr-3B-03] Investigation of Bipolar Degradation of the Base-Collector-Diode of 1.2 kV BJTs under Different Current and Temperature Conditions

*Sarah Rugen1, Nando Kaminski1, Siddarth Sundaresan2, Ranbir Singh2 (1. Univ. of Bremen(Germany), 2. GeneSiC Semiconductor(United States of America))