ICSCRM2019

講演情報

印刷

Oral Presentation

Power and High-Frequency Devices

[Mo-1A] MOSFETs I

2019年9月30日(月) 11:30 〜 12:45 Room A (Kyoto International Conference Center)

11:30 〜 12:00

[Mo-1A-01(Invited)] Design and Performance of SiC Trench MOSFETs

*Dethard Peters1 (1. Infineon Technologies AG(Germany))