ICSCRM2019

講演情報

Oral Presentation

MOS Gate Stacks and Device Processing

[Mo-2A] Oxidation and Nitridation

2019年9月30日(月) 14:15 〜 15:30 Room A (Kyoto International Conference Center)

14:45 〜 15:00

[Mo-2A-03] Impact of substrate orientation on the structure of SiO2/SiC interface

*Xiuyan Li1,2, Mengjun Li2, Tianning Cui1, Sang Soo Lee3, Sylvie Rangan2, Alexi Aermakov2, Timothy T. Fister3, Torgny Gustfsson2, Eric Garfunkel2, Paul Fenter3, Leonard C. feldman2 (1. Shanghai Jiao Tong Univ.(China), 2. Rutgers Univ.(United States of America), 3. Argonne National Lab.(United States of America))