ICSCRM2019

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Oral Presentation

MOS Gate Stacks and Device Processing

[Mo-2A] Oxidation and Nitridation

Mon. Sep 30, 2019 2:15 PM - 3:30 PM Room A (Kyoto International Conference Center)

3:15 PM - 3:30 PM

[Mo-2A-05] Reduction of Interface States in 4H-SiC/SiO2 near both Conduction and Valence Band Edges by High-temperature Nitrogen Annealing

*Keita Tachiki1, Tsunenobu Kimoto1 (1. Kyoto Univ.(Japan))