ICSCRM2019

講演情報

印刷

Oral Presentation

MOS Gate Stacks and Device Processing

[Mo-2A] Oxidation and Nitridation

2019年9月30日(月) 14:15 〜 15:30 Room A (Kyoto International Conference Center)

15:15 〜 15:30

[Mo-2A-05] Reduction of Interface States in 4H-SiC/SiO2 near both Conduction and Valence Band Edges by High-temperature Nitrogen Annealing

*Keita Tachiki1, Tsunenobu Kimoto1 (1. Kyoto Univ.(Japan))