ICSCRM2019

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Oral Presentation

Growth and Wafer Manufacturing

[Mo-2B] 3C-hetero-epitaxy

Mon. Sep 30, 2019 2:15 PM - 3:30 PM Annex Hall 2 (Kyoto International Conference Center)

2:15 PM - 2:30 PM

[Mo-2B-01] High-quality C-face 3C-SiC(111) Grown on off-axis C-face 4H-SiC Substrates

Yuchen Shi1, Valdas Jokubavicius1, Ivan G. Ivanov1, Rositsa Yakimova1, Mikael Syväjärvi1, *Jianwu Sun1 (1. Linkoping University, Sweden(Sweden))