スケジュール 5 14:15 〜 14:30 [Mo-2B-01] High-quality C-face 3C-SiC(111) Grown on off-axis C-face 4H-SiC Substrates Yuchen Shi1, Valdas Jokubavicius1, Ivan G. Ivanov1, Rositsa Yakimova1, Mikael Syväjärvi1, *Jianwu Sun1 (1. Linkoping University, Sweden(Sweden))