ICSCRM2019

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Oral Presentation

Growth and Wafer Manufacturing

[Mo-2B] 3C-hetero-epitaxy

Mon. Sep 30, 2019 2:15 PM - 3:30 PM Annex Hall 2 (Kyoto International Conference Center)

3:15 PM - 3:30 PM

[Mo-2B-05] Microscopic Identification of Surface Steps of SiC by the Density-Functional Calculations

*Kaori Seino1, Atsushi Oshiyama1 (1. Nagoya Univ.(Japan))