ICSCRM2019

講演情報

印刷

Oral Presentation

Growth and Wafer Manufacturing

[Mo-2B] 3C-hetero-epitaxy

2019年9月30日(月) 14:15 〜 15:30 Annex Hall 2 (Kyoto International Conference Center)

15:15 〜 15:30

[Mo-2B-05] Microscopic Identification of Surface Steps of SiC by the Density-Functional Calculations

*Kaori Seino1, Atsushi Oshiyama1 (1. Nagoya Univ.(Japan))