Schedule 6 3:45 PM - 5:45 PM [Mo-P-29] Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET based on Temperature-dependent Hall Effect Measurement Hironori TAKEDA1, Mitsuru SOMETANI2, Takuji HOSOI1, Takayoshi SHIMURA1, Hiroshi YANO3, *Heiji WATANABE1 (1. Osaka Univ.(Japan), 2. AIST(Japan), 3. Univ. Tsukuba(Japan))