Mon. Sep 30, 2019 3:45 PM - 5:45 PMAnnex Hall 1 (Kyoto International Conference Center)
Schedule
5
3:45 PM - 5:45 PM
[Mo-P-39] Increased Short-Circuit Withstand Time and Reduced DIBL by Constant-Gate-Charge Scaling in SiC Power MOSFETs
*James A Cooper1, Dallas T. Morisette2, Madankumar Sampath2(1. Sonrisa Research, Inc. and Purdue Univ.(United States of America), 2. Purdue Univ.(United States of America))