ICSCRM2019

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Oral Presentation

Characterization and Defect Engineering

[Th-1B] Extended Defects II

Thu. Oct 3, 2019 8:45 AM - 10:15 AM Annex Hall 2 (Kyoto International Conference Center)

9:45 AM - 10:00 AM

[Th-1B-04] BPD-TED Conversion in the SiC substrate after High-Temperature Si-VE

*Yusuke Sudoh1, Makoto Kitabatake1, Tadaaki Kaneko2 (1. Toyo Tanso Corp.(Japan), 2. Kwansei Gakuin Univ.(Japan))