ICSCRM2019

講演情報

印刷

Oral Presentation

MOS Gate Stacks and Device Processing

[Th-2A] Device Processing

2019年10月3日(木) 10:45 〜 12:15 Room A (Kyoto International Conference Center)

10:45 〜 11:15

[Th-2A-01(Invited)] Improved Al2O3 gate technology for high-power and high-frequency GaN transistors

*Tamotsu Hashizume1,2 (1. Research Center for Integrated Quantum Electronics, Hokkaido Univ.(Japan), 2. Institute of Materials and Systems for Sustainability (IMaSS), Nagoya Univ.(Japan))