ICSCRM2019

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MOS Gate Stacks and Device Processing

[Th-2A] Device Processing

Thu. Oct 3, 2019 10:45 AM - 12:15 PM Room A (Kyoto International Conference Center)

11:30 AM - 11:45 AM

[Th-2A-03] The Waffle Substrate: A Novel Approach to Reducing Substrate Resistance in SiC Power Devices

Noah Opondo1, *James A Cooper2, Hangjie Liao1, Weinong W. Chen1, Dallas T. Morrisette1 (1. Purdue Univ.(United States of America), 2. Sonrisa Research, Inc., and Purdue Univ.(United States of America))