Breakdown Characteristics of Lateral PIN Diodes Fully Fabricated by Ion Implantation into HTCVD-Grown High-Purity Semi-Insulating SiC Substrate

Presentation information

Oral Presentation

MOS Gate Stacks and Device Processing

Thu. Oct 3, 2019 10:45 AM - 12:15 PM Room A (Kyoto International Conference Center)

11:45 AM - 12:00 PM

*Mitsuaki Kaneko^1,2, Alexander Tsibizov², Tsunenobu Kimoto¹, Ulrike Grossner² (1. Kyoto Univ.(Japan), 2. ETH Zurich(Switzerland))