ICSCRM2019

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Oral Presentation

MOS Gate Stacks and Device Processing

[Th-2A] Device Processing

Thu. Oct 3, 2019 10:45 AM - 12:15 PM Room A (Kyoto International Conference Center)

12:00 PM - 12:15 PM

[Th-2A-05] Investigating the Influence of Al Ion Implantation and Post-Implantation Annealing on the Near-Surface Area of 4H-SiC

*Johanna Mueting1, Viktor Bobal2, Marc Georg Willinger1, Steffen Reidt3, Lasse Vines2, Ulrike Grossner1 (1. ETH Zurich(Switzerland), 2. University of Oslo(Norway), 3. IBM Research(Switzerland))