ICSCRM2019

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Oral Presentation

Growth and Wafer Manufacturing

[Th-2B] Alternative Bulk Growth

Thu. Oct 3, 2019 10:45 AM - 12:15 PM Annex Hall 2 (Kyoto International Conference Center)

10:45 AM - 11:15 AM

[Th-2B-01(Invited)] Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method

*Yuichiro Tokuda1, N. Hoshino2, H. Kuno1, H. Uehigashi1, T. Okamoto1, T. Kanda1, N. Ohya1, I. Kamata2, H. Tsuchida2 (1. DENSO CORPORATION(Japan), 2. Central Research Institute of Electric Power Industry (CRIEPI)(Japan))