ICSCRM2019

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Oral Presentation

Growth and Wafer Manufacturing

[Th-2B] Alternative Bulk Growth

Thu. Oct 3, 2019 10:45 AM - 12:15 PM Annex Hall 2 (Kyoto International Conference Center)

11:15 AM - 11:30 AM

[Th-2B-02] Changes in dislocation densities in 4H-SiC bulk crystals obtained by gas source method at a high growth rate

*Norihiro Hoshino1, Isaho Kamata1, Takahiro Kanda3, Yuichiro Tokuda3, Naohiro Sugiyama2,3, Hironari Kuno3, Hidekazu Tsuchida1 (1. CRIEPI(Japan), 2. AIST(Japan), 3. DENSO CORP.(Japan))